Non-Quasi-Static modeling of printed OTFTs

A non-quasi-static compact model well suited for the simulation of electrical behavior printed organic thin-film transistors (OTFTs) is proposed and validated. The based on discretization current continuity equation by using a spline collocation approach while transport in semiconductor described variable range hopping theory. accounts presence parasitic regions that are often found layouts OTFTs due to large process tolerances. has been implemented Verilog-A language validated comparison with capacitance vs. voltage (small signal) characteristics devices measurements made OTFT-based common-source amplifiers (large signal). quasi-static version reported.